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Presented in this letter are the C-V data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The C-V curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using...
Modeling capabilities and considerations to achieve a unified reliability model (URM) are addressed. The causes of the trap generation and their effects on the device characteristics serve the unified reliability model. A strategy taken in the SNU group based on the CLESICO system is introduced, where the hydrogen transport and trapping in the gate dielectric to form active carrier trapping sites...
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