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For the radial boundary force induced in the process, the strain energy distribution and strain tensor components in Ge (110) nanowire (NW) are calculated by finite element method. Based on the strain distribution, we compute valence band structures with different radial forces. As increasing force values, top valence subbands shift downwards. The influence on the corresponding effective masses and...
The effect of source/drain (S/D) bias on the negative bias temperature instability (NBTI) of pMOSFETs is studied. The anomalously enhanced NBTI under S/D bias conditions is observed, which cannot be explained by the conventional reaction-diffusion model. A new mechanism based on the enhanced interfacial dissociation of equivSi-H bonds induced by the energetic holes (the hole energy Eh is higher than...
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