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The beam quality of 800 nm AlGaAs/GaAsP broad-area (BA) laser diodes with large optical cavity (LOC) waveguide structures was studied under high power conditions. The LOC structures consist of a tensile-strained GaAsP single quantum well embedded in AlGaAs layers forming 1 and 2μm thick waveguide cores. A low beam divergence of 51 o respectively 46 o (full width at 1/e 2 maximum)...
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