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We quantify contributions to threshold-current in state-of-the-art 1.55 mum GaInNAsSb lasers and the affect of layer design and nitrogen level. Non-radiative current is independent of nitrogen content (3.0-3.3%) but linked to the GaNAs barriers.
We present the operation of electrically-injected 1528 nm GaInNAsSb vertical cavity surface emitting lasers grown on GaAs. Pulsed lasing at room temperature and continuous wave lasing at low temperatures are reported for the first time.
Electrically-pumped GaAs-based 1.53 mum vertical cavity surface emitting lasers operating in pulsed mode at room temperature and continuous wave (CW) up to 20degC are reported for the first time. The lasers employ a GaInNAsSb/GaNAs multiple quantum well active region, a selectively oxidised AlAs aperture and p- and n-doped Al(Ga)As/GaAs distributed Bragg reflectors. Typical devices have room-temperature...
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