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In this paper, we present the design of a MMIC circuit, which contains two switched VCOs based on the Clapp topology using a UMS GaInP/GaAs HBT technology. This achieves more than 30% of tuning range around 3.2 GHz, a phase noise of -95 dBc/Hz at 100 KHz offset frequency from the carrier and a power consumption of 150 mW. A DC switch based on HBT was used in order to switch between the 2 VCOs.
AlGaN/GaN HEMTs have been widely used in RF power circuits such as high power amplifiers. This is mainly due to the capability to handle large power. Besides this main advantage, this technology demonstrates good performances in terms of noise, linearity, and robustness. This paper presents the design, and measurement results of different mixers operating at C-, Ku-, and Ka-band. All designs make...
Results of a Ku band High Power Amplifier (HPA) module demonstrator based on solid state devices for active antenna application is described in this paper. The HPA module based on four combined GaAs monolithic microwave integrated circuits (MMIC's) produces an estimated output power of 39.2 dBm and has shown an estimated Power Added Efficiency (PAE) of 31.5% over 1 GHz frequency band. The power combining...
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