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In this paper, we present the design of a MMIC circuit, which contains two switched VCOs based on the Clapp topology using a UMS GaInP/GaAs HBT technology. This achieves more than 30% of tuning range around 3.2 GHz, a phase noise of -95 dBc/Hz at 100 KHz offset frequency from the carrier and a power consumption of 150 mW. A DC switch based on HBT was used in order to switch between the 2 VCOs.
In this paper, two wideband double and triple balanced mixers integrated in GaAs technology are presented. Diodes quads in such structures are driven by low loss baluns. These baluns are designed thanks to double-inductances connected as Marchand coupler. In the mid-band, a conversion loss of 10dB has been measured for the two mixers. The double and triple balanced mixers have a LO/IF isolations of...
Results of a Ku band High Power Amplifier (HPA) module demonstrator based on solid state devices for active antenna application is described in this paper. The HPA module based on four combined GaAs monolithic microwave integrated circuits (MMIC's) produces an estimated output power of 39.2 dBm and has shown an estimated Power Added Efficiency (PAE) of 31.5% over 1 GHz frequency band. The power combining...
This paper provides a new approach to evaluate the transistor safe operating area for a nonlinear operation in the overdrive operating conditions. This approach has been implemented for a MESFET technology. The methodology consists in performing ON-state and OFF-state accelerated DC step stresses for bias conditions, which can be reached by VDS and VGS sweeps in the overdrive operating conditions...
This paper provides a new approach to evaluate the transistor safe operating area at nominal operating conditions which has been demonstrated on MESFET technology. It consists on performing on-state and off-state accelerated DC step stresses for bias conditions which can be reached by the Vds and Vgs sweeps in overdrive conditions. Both on-state and off-state stresses shown different degradation modes...
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