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An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied. Effects of mesa depth, substrate thickness, pixel dimension and channel length on the photoresponse and crosstalk have been investigated. Our work shows that the spectral photoresponse and crosstalk are largely dependent on the geometric design of device.
We report on 2D numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths are extracted theoretically. An empirical formula is proposed to predict...
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
A series of dilute InNSb films with different N composition were prepared at various growth conditions by RF-MBE. The film samples were characterized by Atom force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and room temperature Raman scattering spectroscopy, the measurements indicated that the InNSb films are of high crystalline quality and most of the N atoms are at the substituted...
In this paper, we theoretically study the performance of a separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP single photon avalanche diode (SPAD) using a two-dimensional drift-diffusion model based on our experimental results. The electric field, dark current and breakdown voltage are calculated for the SPAD for different thickness of the charge and the multiplication layers,...
We report on 2D simulations of dark current for InP/InGaAs/InP p-i-n photodiode by Sentaurus DEVICE. Our simulation result is in good agreement with experiment indicating that generation-recombination is the dominant source of dark current at low bias. Effects of absorption layer thicknesses and doping concentrations on dark current are investigated in detail.
The InGaAs/InP avalanche photodiode (APD) of thin heterostructure charge layer has studied. Apsys software is used for simulation. For reducing the dark current and achieving higher avalanche gain, a 30 nm InP charge layer and 100 nm InGaAsP grade charge layer used between 400 nm multiplication and absorption layers. Simulation results demonstrated that the low dark current properties and low breakdown...
The theoretical study has been performed on a low dark current InGaAs/GaAs very-long-wavelength (>12 mum) quantum well infrared photodetector (VLW-QWIP), based on a double barrier resonant tunneling structure (DBRTS). The ground tunneling state of the central quantum well (QW) of the DBRTS resonates with the first excited bound state of the doped InGaAs QW by adjusting the structure parameters...
We report on the 2D simulations of electrical and optical characteristics for green color InGaN/GaN multiple quantum well light-emitting diodes by the APSYS software. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered with quantum dot model. The simulation results are in good agreement with experiment and indicate that quantum dot spontaneous emission and...
We report our investigation on piezoreflectance spectra (PZR) of a conventional InAs quantum dots (CVQD) and an InAs/In0.15Ga0.85As dots-in-a-well (DWELL). A large red-shift of ground state QD0 between two samples is attributed mainly to larger size of DWELL induced by the activated strained-driven decomposition.
InN:Cr films were prepared at Al2O3 substrate by low temperature (300degC) molecular beam epitaxy (MBE). The InN:Cr films show clear ferromagnetic properties up to 350K. The electronic structure of the InN:Cr film has been studied by photoemission spectroscopy.
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