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We present a 1.65 μm GaSb/AlGaSb quantum-well (QW) laser operating at room temperature, grown buffer-free on a GaAs substrate. The enabling technology in this device is a layer of interfacial misfit dislocations (IMF) that completely relieve the strain between the GaAs substrate and the GaSb epi-layer without the use of thick metamorphic buffers. The IMF array is localized to the GaAs/GaSb interface,...
A GaSb quantum-well (QW) laser diode grown monolithically on a 5deg miscut Si (001) substrate is presented. The III-Sb epi-structure is grown monolithically on the miscut Si substrate via a thin (50 nm) AlSb nucleation layer. The 13% lattice mismatch between AlSb and Si is accommodated by a self-assembled 2D array of interfacial misfit dislocations (IMF). The 5deg miscut geometry enables simultaneous...
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