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This paper presents a well-established low power sample & hold circuitry, implemented in 180-nm CMOS technology. This circuit uses a systematic and optimal design of hybrid cascode compensation method which is used in fully differential two-stage CMOS operational transconductance amplifiers (OTAs). The circuit achieves minimum SNR of 74 dB in all corner cases. Also average current dissipation...
In this paper, we investigate the temperature dependence of delay propagation characteristic of FinFET circuits. The study is performed on several digital circuits including inverter, NAND, NOR, XOR and full-adder implemented in a 32-nm FinFET technology. The results show that the speed of the FinFET circuits is enhanced when the temperature is increased. The temperature dependencies of the FinFET...
Simulation results are provided for the modified nanoscale field effect diode (FED) used as a variable gain amplifier in automatic gain control systems. field effect diode is similar to regular MOS transistors with the exception of using two gates over the channel region and oppositely doped source and drain. Its current-voltage characteristic results in large gain, low power dissipation and better...
The use of field effect diode (FED) together with double gate (DG) silicon on insulator (SOI) MOSFET for implementing variable gain amplifier (VGA) in automatic gain control (AGC) systems are investigated in this paper. These VGA circuits show better characteristics in terms of power and bandwidth compared with MOSFET-VGA. Using the FED and DG SOI-MOSFET devices, leads to more flexibility in terms...
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