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A Q-band MMIC power amplifier has been designed, processed, and measured with first pass success. Design parameters include 20 dBm power, 25 dB gain, 40 % PAE, input return loss of 10 dB and output return loss of 6 dB across 43.5 to 45.5 GHz. The MMIC design is based on the BAE Systems 0.1 μm MHEMT device, which has high gain and excellent PAE. The two-stage amplifier uses a 2-finger, 75 μm unit gate...
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