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The method of sapphire substrate liftoff for the fabrication of vertical nitride light-emitting diode (LED), based on the combination of the photoelectrochemical (PEC) etching and epitaxial lateral overgrowth (ELOG) techniques, is demonstrated. This method relies on the formation of connected voids during the ELOG process on a GaN template such that PEC electrolyte can approach the GaN portions above...
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