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We demonstrate enhanced electro-optic phase shifts in suspended InGaAs/InGaAsP quantum well rib waveguides compared to substrate-attached waveguides. The tighter mode confinement results in Vpi L coefficients as low as 0.41 V cm.
We demonstrate enhanced electro-optic phase shifts in suspended InGaAs/InGaAsP quantum well waveguides compared to attached waveguides. The enhancement stems from tightened mode confinement between the electrodes, and should improve further with thinner waveguides.
We experimentally demonstrate an InP-based microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator that operates in the optical C-band. The device exhibits contrast ratios over 20 (13 dB) with less than 8 volts bias.
We have used surface micromachining to fabricate suspended InGaAs quantum well waveguides that are supported by lateral tethers. Their enhanced electro-optical and nonlinear-optical properties will be discussed.
We demonstrate that micromachining multiple quantum wells produces lateral (in-plane) modifications to the semiconductor band structure that are accurately modeled by finite-element analysis combined with an eight-level band-structure calculation
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