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Accurate positioning of semiconductor nanowires with lasing emission at room temperature at targeted locations, onto multiple substrates and forming complex spatial patterns is demonstrated using a novel nanoscale Transfer Printing technique.
We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
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