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Single-mode Si-wire waveguides, fabricated in the Si-on-insulator platform, are the basis for a growing number of potential applications in linear and nonlinear integrated optical devices and systems. This paper reviews the fundamental optical physics and behavior of these waveguides and demonstrates how their reduced transverse dimensions and index contrast lead to a series of unique and distinct...
Error-free detection at 1 Gb/s is demonstrated with a Si ion-implanted waveguide photodiode operating at 1.9 μm. The measured 0.14-A/W responsivity corresponds to a 5 dB decrease in photocurrent compared to operation at 1.55 μm.
We experimentally demonstrate error-free operation of an all Si ion implanted CMOS compatible PIN photodiode at 1.55 μm with 2.5-Gb/s and 10-Gb/s data rates. Detector sensitivity as a function of bias voltage is measured.
We present a numerical analysis demonstrating that the anisotropy of the Kerr effect in Silicon can be used to form a nonlinear grating in Silicon waveguides with uniform cross-section.
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