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In this work, we present a novel vertical MOSFET with embedded gate structure and try to overcome the challenges mentioned above by modifying the junction depth. Therefore, four types of vertical sidewall MOSFETs with embedded gate (EVGMOS) are also demonstrated and called the EVGMOS having lightly-doped drain (LDD) w/o or w/ 2.5 nm Si etching after gate formation and non-LDD w/o or w/ 2.5 nm Si etching...
In this work, our main aim is to investigate the effects of source/drain thickness on the characteristics of self-aligned quasi-silicon-on-insulator metal-oxide semiconductor field-effect transistor with pi-shaped semiconductor conductive layer. According to the simulation results, we found that the short-channel characteristics and self-heating are much sensitive to the source/drain thickness. A...
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