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Cycling-induced threshold-voltage instabilities in NAND Flash memory arrays are investigated via compact modeling of the NAND string. Calibration against experimental data allows the extraction of the model parameters and of their dependence on cycling dose and post-cycling bake time. Results are used to study the impact of charge trapping/detrapping in the tunnel oxide and interface state generation/annealing...
This paper presents a detailed investigation of the performance of a double-verify algorithm for accurate programming of deca-nanometer NAND Flash memories. In order to minimize the programmed threshold-voltage distribution width in presence of discrete and statistical electron injection, a weakened programming step is applied to cells if their threshold voltage falls between a low- and a high-program-verify...
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