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Cuprous oxide Cu-O thin film was deposited by Reactive Ion Plating (RIP) method, and the thermoelectric properties of Cu-O thin films were studied with varying oxygen content. Copper was evaporated by electron gun, and thin film of Cu-O was deposited with reaction in oxygen plasma. Adjusting of oxygen gas flow rate could control oxygen content of the deposited thin film. Seebeck coefficient and resistivity...
Contact resistance at the terminations of bismuth wire array of 25 mum diameter is reduced by ion plating of a titanium interlayer 100 nm upon the wire ends. 1,000 nm-thick copper electrodes are ion plated upon the titanium. Copper probe electrodes are then attached using Pb-Sn solder. The temperature dependence of the Seebeck coefficient and resistance are measured upon heating from 25 K to 300 K...
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