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With sub-16nm CMOS nodes looming, this work proposes a novel device structure for Gate-All-Around (GAA), Nanowire (NW) tunneling-FET (tFET), with axial heterojunction on the source-channel junction, gate-underlap on the drain end of the channel, and optimized doping levels of source and drain. This structure successfully suppresses the undesirable ambipolar transfer characteristics of conventional...
We studied the atomistic structure of boron atom at the Si(001)/SiO2 interface using ab initio calculation method to investigate the mechanism of boron pile-up at the interface. We found that, if there is no defects, such as oxygen vacancy, at the interface, no stable sites of B would appear at Si/SiO2 interface and SiO2 layer, thus indicating that boron in silicon will only diffuse to the interface,...
Fluorine related diffusion has drawn extensive attention recently, for experiments revealed that co-implanted F in Si can reduce transient enhanced diffusion (TED) of boron. However, disagreement still exists on whether this effect is caused by interaction of F with point defects or that with boron atoms. Also, some unusual F diffusion behaviors are still not thoroughly understood. We attempt to establish...
A molecular dynamic method for cluster implantation simulation which is a potential technology for shallow junction formation in integrated circuits manufacture, aimed at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters including H atoms are described by the model. A potential function taking a form of combining the ZBL and the SW potentials...
The kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC~1200degC are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by...
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