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The ultraviolet photoconductivity of porous GaN (PGaN) produced by Pt-assisted electroless etching has been investigated. The photoresponse of PGaN prepared from highly doped GaN (n>1018cm−3) shows enhanced (15×) magnitude and faster decay of persistent photoconductivity relative to bulk crystalline (CGaN), suggesting advantages for PGaN in photodetector applications. A space charge model for changes...
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