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ZnO thin films grown on Si(111) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500°C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (002)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with...
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