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Channel mobility μeff for InGaAs MISFETs is improved by using the (111)A surface orientation and (NH4)2S treatment. These μeff improvements are associated with negative shifts in Vth and Vfb. We propose that carrier scattering by fluctuated dipoles at the MIS interfaces contributes to μeff for the III-V MISFETs. For the InP MISFETs, the effects of the interface dipoles are not apparent due to their...
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