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This study analyzes the effect of biases in the deep n-well on excess noise in 850-nm Si avalanche photodiodes (APDs). Si APDs were fabricated in standard 0.18-μm CMOS technology. The extra bias in the deep n-well can effectively eliminate the slow photo-generated carriers from the substrate and improve bandwidth and excess noise.
An injection-locked frequency divider (ILFD) designed for Ka-band millimeter-wave applications has been implemented in 0.18 ??m CMOS process with a wide locking range and a low power consumption. Based on the circuit topology of the differential injection with combining the tail-and the direct injectors, the locking range can efficiently be enhanced. Comparing with the conventional ILFD circuits only...
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