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Current status of plasma charging damage is assessed. The impact of wide adaptation of high density plasma in IC processing to charging damage is examined for advanced CMOS technology where ultrathin gate oxide is used. The issue of measurement is high-lighted. The resulting misconception of plasma charging damage is no longer a problem when gate oxide is ultrathin is explained as a result of measurement...
Modern advanced processing plasmas tend to have high-density and extremely well engineered uniformity. From the plasma charging damage prospective, high-density suggests the potential for more severe damage once the voltage across the thin gate oxide condition is satisfied. In principle, good uniformity means that the gross non-uniform plasma potential induced damage is not likely to exist. Unfortunately,...
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