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Experimental results of the modal gain and recombination currents of a GaAsSb/InGaAs type-II quantum well laser structure emitting at 1.3 mum as a function of current injection and temperature are presented. The radiative efficiency versus injection level at different temperatures is analyzed.
We have measured modal gain and absorption data for doped and undoped quantum dot devices. We show that p doping results in an increase in the amount of gain available at a fixed current.
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