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A process for anisotropically etching AlGalnP/GaAs laser structures in a high-temperature (180degC), single-step BCl3/Cl2/Ar plasma process is demonstrated. The etch rate is shown to be stable over the duration of the etch due to its in- sensitivity to temperature. However, this etch process is unsuitable for etching high-aspect-ratio features due to the strong aspect ratio dependence of the GaAs...
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