The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Reductions in non-radiative recombination and αi with increasing Ga composition of the upper-confining-layer in InP self-assembled quantum-dot lasers reduce threshold-current-density and temperature dependence. Carrier population of 2-D layers limits further improvement at higher Ga compositions.
We demonstrate MOVPE grown InP q-dot lasers with low threshold current density (195 Acm-2 for 2000 mum long uncoated devices at 300 K) and extended wavelength-coverage (680-740 nm). Modulation p-doping reduces gain saturation in lower confinement structures.
We examine the temperature dependence of threshold current in self-assembled quantum dot lasers focusing on the factors that produce an increase of threshold current at high temperatures. Nonradiative recombination makes up the majority of threshold current and the temperature dependence of threshold current at higher temperatures. We measure radiative efficiencies at low current density for an undoped...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.