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In this work, we report the performance of 3 µm gate length “dual barrier” InAlN/AlGaN/GaN HEMTs on Si substrates with gate–drain contact separations in the range 4–26 µm. Devices with Pt‐ and Ni‐based gates were studied and their leakage characteristics are compared. Maximum drain current IDS of ∼1 A mm−1, maximum extrinsic transconductance gm ∼203 mS mm−1 and on‐resistance Ron ∼4.07 Ω mm for gate...
Two different substrates of AlGaN/GaN HEMT have been employed and demonstrate the comparative analysis of improved DC and RF properties. Due to the characteristics of high power density, excellent thermal conductivity, 4H-SiC substrate has 18.9%, 10%, 8.6% higher values of drain current density, extrinsic transconductance and break down voltage than Si(111) substrates respectively. As a result, due...
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