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The influence of external tensile stress on blue InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) is demonstrated. It was found that applying external tensile stress effectively compensates for the compressive strain developed in the InGaN active layer, thus reducing the quantum-confined Stark effect by attenuating the piezoelectric polarization from the InGaN layer. With 35A/cm ...
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