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Accurate measurement of FET gate resistance is needed to support technology development and to understand its impact on RF performance. This is especially true for high-K Metal Gate Fin FET technologies. Decreasing gate capacitance with each successive technology node has made gate resistance measurement increasingly difficult. This work presents a "Virtual De-Embedding" approach to the...
Reference materials have been applied widely to ensure the traceability, comparability and reliability of measurement results. To achieve this purpose, the quality of reference materials (RMs) themselves is surely an important aspect to be pay attention to. A quality evaluation system of RMs has been established through the project “The National Sharing Platform of Reference Materials” in China to...
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