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Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in which to fabricate power electronic devices for quite some time based on its very promising fundamental materials properties. However, it has been far more recently that the potential of SiC is being appreciated as a result of the recent advances...
4H-SiC DMOSFETs designed to conduct up to 20 A and block in excess of 1200 V are described, and a performance comparison with comparably rated Si MOSFETs and IGBTs is presented. The 4H-SiC DMOSFETs show comparable to slightly improved on-state losses compared to the Si IGBTs and significantly improved performance over the Si MOSFET. Leakage currents of the 4H-SiC DMOSFETs are two orders of magnitude...
The characteristics of silicon carbide, 1200 V, 20 A MOSFETs have been described from a user's perspective. DC and dynamic characteristics of SiC MOSFETs have been compared with Si 900 V super junction MOSFET (SJMOSFET), Si 1200 V MOSFET and IGBTs. The advantages of SiC MOSFET are their lower turn-off losses, lower conduction losses and lower gate charge. However, they have low output impedance, low...
This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV and 10 kV SiC DMOSFETs have been produced with die areas greater than 0.64 cm2. SiC JBS diode dies also rated at 1.2 kV and 10 kV have been produced with die areas exceeding 1.5 cm2. These results demonstrate that SiC power devices provide a significant leap forward...
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