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The crystallization behavior of Er-doped Ge2Sb2Te5 phase-change materials is investigated systemically for phase change memory application. It is observed that Er dopants can serve as a center for suppression of face-centered-cubic to hexagonal phase transition of Ge2Sb2Te5 films, leading to a one-step crystallization process. The crystallization temperature, 10-year data retention ability and crystalline...
The thermal stability and its crystallization behavior in Ge-Mg-Te films were investigated. The results reveal that the bond combination among Mg, Ge and Te has occurred in Mg-Ge-Te. The formed Mg-Ge and Mg-Te phases increase the crystallization temperature, crystalline resistance and optical band gap. The ratios between amorphous and crystalline states were increased to 108. The crystal phase was...
Ge-rich Ge-Te-Zn thin films were investigated for phase change memory application. The crystallization behavior is improved by adding Zn into the Ge2Te material. The crystallization temperature of the Zn16.1Ge57Te26.9 film is 297 °C and the crystalline activation energy is about 4.02 eV. The 10-years’ failure temperature for Zn16.1Ge57Te26.9 film is about 202.4 °C, implying high thermal stability...
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