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Junction temperature of insulated gate bipolar transistors (IGBTs) plays an important role in power semiconductor devices reliability. However, it is difficult to have direct access to the chip to obtain the junction temperature. This paper provides a new approach to extract the junction temperature by using combined thermo-sensitive electric parameters (TSEPs) during turn-off transient due to the...
High power insulated gate bipolar transistor (IGBT) modules are widely used in the wind power generator systems, electric locomotives, high voltage direct current transmission, etc. In such safety-critical and cost-sensitive applications, IGBT module reliability drawn research focuses. Research shows that IGBT reliability is closely related to junction temperature. In this paper, a junction temperature...
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