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Two approaches for fabricating white-light light-emitting diodes are discussed, including the stacking of various InGaN/GaN quantum wells for mixing into white light and the use of ll-VI nano-crystals for converting short-wavelength photons into long-wavelength light.
A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.
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