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It is proposed to control the beam quality of broad-area semiconductor devices by two-dimensional structuring enforcing phase coherence across the device. First results based on MMI couplers are presented.
Broad area semiconductor (BAS) laser are relevant high conversion light sources despite that the spatial and temporal quality of the emitted beam is relatively low due to the absence of a natural transverse mode selection mechanism [1]. To overcome this serious drawback different solutions have been incorporated in the design, such as external gratings, external injection spatially modulated injection...
In this paper, we proposed a new mechanism for bistable phase locking that does not require any temporal modulation. The mechanism is inspired in temporal rocking and consists in the injection of a single monochromatic signal that has two opposite phase values. Consider a laser cavity with spherical mirrors tuned to its TEM00 mode. Then a monochromatic signal that is (nearly) resonant with that mode...
The authors present an alternative to rocking that leads to the same type of behaviour, namely the appearance of bistable phase locking and, in the case of large Fresnel number lasers, to stable (phase bistable) cavity solitons and extended patterns. The new type of injection we present here is monochromatic, unlike usual rocking, but it is spatially modulated across the transverse plane of the cavity,...
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