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An analytical model is proposed to describe the on-state current in linear and saturation regions for the high-voltage C-SenseFET. As C-SenseFET is an important sensing and charging integrated device, two key parameters–-sensing ratio K and charging swing factor α are analyzed in detail and some optimizational structures are provided. For the practical application of C-SenseFET, K and α are required...
A new BLR structure with P type islands (PI-BLR) is proposed, the principle of which is to introduce P type islands into the JFET region of the basic BLR structure. The forward voltage drop (VF) of BLR can be further reduced without affecting the breakdown voltage of BLR. Thus, an attractive method is provided to coordinate the trade-off relationship between forward voltage drop and breakdown voltage...
A SPICE-compatible circuit model for multi-sensor CDPS SENSE-FET (Current Detection and Power Self-Supply Sense Field Effect Transistor) is proposed. Based on the discrepancy in the current flow-lines, the subcircuit model is developed by employing the piecewise model equivalence. A dual-gate controlling model has been included to precisely describe the controllable charging current. Simulations,...
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