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We show that the use of a low growth rate combined with low N flux and RF power during molecular beam epitaxy (MBE) growth of dilute nitrides can efficiently enhance N incorporation while retaining good optical quality. A maximum light emission wavelength of 1.44 and 1.71μm has been obtained at 300K from GaNAs and GaInNAs quantum wells, respectively. We demonstrate high-performance 1.3μm GaInNAs multiple...
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