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Four-channel 25-Gb/s direct modulation of a 1.3-μm surface-emitting laser array with a surface mountable device structure was demonstrated. The fabricated laser array, which consists of InGaAlAs-MQW DFB stripes, exhibited a total output of 100 Gb/s with collimated optical outputs.
Circular, narrow beam emission of a lens-integrated surface-emitting laser operated at 1.3-mum wavelength was demonstrated. The laser consists of a distributed feedback laser cavity monolithically integrated with an etched 45deg total reflection mirror and an etched InP lens. The profile of the etched InP lens was estimated to be a highly symmetrical parabolic shape that is ideal for the collimation...
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. To realize the high-speed, small-footprint, low-power-consumption and cost-effective semiconductor light source, we have investigated the several key technologies. Newly developed 1.3 mum range 25 Gbps and 43 Gbps EA/DFB laser showed a good transmission performance over 10 km single mode fiber...
We demonstrated a polarization-independent Mach-Zehnder interferometer-type photonic switch with very-low-current of about 5 mA. Furthermore, a few nano-second switching response time was also confirmed which suits for application to optical packet switching.
We first report a low power consumption (under 0.18 W) and a wide temperature range (-5 to 75 degC) operation of 1.55-mum un-cooled EA/DFB-LD coaxial-type TOSA in 10-Gbit/s 40-km transmission.
Uncooled 10-Gbps, 1.55-mum InGaAlAs EA/DFB laser has been realized. Error free 80-km transmission was demonstrated up to 95 degC. A power penalty below 2-dB with over 9.8-dB dynamic extinction ratio was achieved over wide temperature range.
We propose the use of a short-cavity distributed Bragg reflector (DBR) laser with a modified active DBR structure, which has an n-type-doped active single quantum well, and that achieves fast wavelength switching that is potentially applicable for optical packet switching networks. The laser exhibits 6.4-nm continuous tuning by moderating a steep gain change at a low DBR injection current. Furthermore,...
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