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Vertical cavity surface emitting lasers have been produced which emit greater than 100 mW CW output power. The devices have been optimised for operation at high temperatures, and are heatsunk to improve operation at large bias currents.<<ETX>>
A lower energy barrier p-type Al/sub 0.67/Ga/sub 0.33/As-GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86 V, and a record high power-conversion efficiency of 14.9% was achieved.<<ETX>>
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