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A lower energy barrier p-type Al/sub 0.67/Ga/sub 0.33/As-GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86 V, and a record high power-conversion efficiency of 14.9% was achieved.<<ETX>>
A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al/sub 0.67/Ga/sub 0.33/As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device...
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