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Hydrogen lateral diffusion by annealing at low temperature was proposed to eliminate the burn-in effect in carbon-doped InGaP/GaAs heterojunction bipolar transistors (HBTs). After a thermal annealing at 480 o C for 30 min, the current gain variations caused by the electrical stress decreased from 42.7% to 2.6% as the emitter width was reduced from 100 to 5 μm. After the annealing process,...
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