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We show that Cu-Ge alloys prepared by depositing sequentially Cu and Ge layers onto GaAs substrates at room temperature followed by annealing at 400°C form a low-resistance ohmic contact to n-type GaAs over a wide range of Ge concentration that extends from 20 to 40 at.%. A contact resistivity of (4-6) x 10-7 Ω cm2 is obtained on n-type GaAs with doping concentrations of∼ 1 x 1017 cm-3. The contact...
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