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The in situ high‐pressure behavior of the semiconductor antimony trioxide (Sb2O3) has been investigated by Raman spectroscopy techniques in a diamond anvil cell up to 20 GPa at room temperature. New peaks in the external lattice mode range emerged at a pressure above 8.6‐15 GPa, suggesting that the structural phase transition occurred. The pressure dependence of Raman frequencies was obtained. The...
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