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Two simple implementations of circuits to extract VT are introduced. They are independent of body effect and operate on a single supply voltage VDD of less than two gate-source drops. Experimental and simulation results verify the circuit operation with a power dissipation P=60μA and with single supply VDD=1.4V in 0.5μm CMOS technology and with variations of the extracted threshold voltage of less...
A novel CMOS transconductor based on transistors operating in the triode region and quasi-floating gate (QFG) techniques is proposed. The V-I conversion is performed by two triode transistors acting as a current divider and QFG transistors are employed to enforce a constant drain-source voltage, improving the linearity notably. The circuit has been fabricated and measured using a 0.5 m CMOS technology...
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