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The InAs quantum dots on GaAs (001) substrate were first grown by LP-MOVPE using tertiarybutylarsine (TBA) in nitrogen ambient. Samples were characterized using atomic force microscope (AFM) and photoluminescence (PL) spectroscopy at 77K. The average diameter of the dots increases with the group III source trimethylindium (TMIn) inlet flow. The shape of dots also changes with the TMIn inlet flow....
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