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A two-dimensional analytical model is presented to study the impact of LACGAS device on the device characteristics. It is demonstrated that LACGAS leads to suppression of short channel effects such as threshold voltage (Vth) roll-off, drain induced barrier lowering (DIBL) and hot carrier effects. It also improves the transport efficiency owing to a greater gate control which is achieved by incorporating...
In this work, the proposed GME-TRC MOSFET structure has been investigated for different negative junction depths (NJD) and different gate metal workfunction difference and its performance improvement over the TRC MOSFET is studied using ATLAS-3D and DEVEDIT-3D. The result clearly depicts that GME-TRC MOSFET exhibits superior performance as compared to TRC MOSFET in terms of threshold voltage roll-off,...
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature,...
In this paper, we propose a new MOSFET design: Multi Layered Dielectric Four Gate MOSFET (G4-MLD MOSFET) and investigate its device performance through a two dimensional (2-D) analytical model by solving Poissonpsilas equation using parabolic potential profile approach. The 2-D analytical model gives physical insight into the electrical characteristics of this design in terms of surface potential...
In recent years, double gate high electron mobility transistor (DGHEMT) have been introduced to provide better immunity to short channel effects which are inescapable with downscaling of the single gate devices due to fundamental limit on gate-to-channel thickness. Furthermore, in sub 100 nm regime, for lower device aspect ratio, channel thickness also becomes an important parameter affecting the...
The objective of this paper is to investigate and explore the potential of AlGaN/GaN based metal insulator semiconductor heterostructure field effect transistor (MISHFET) device for high temperature applications. A temperature dependent analytical model is proposed taking into account the effect of various temperature dependent material properties. The electrical characteristics like drain current,...
In this paper, we propose a novel MOSFET design: Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET and investigate the effect of the negative junction depth (NJD) for different source drain(S/D) extension on the electrical behaviour of proposed structure. The results are compared with conventional Trapezoidal Recessed Channel (TRC) MOSFET using device simulators-DEVEDIT 3-D and...
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for lightly doped Double Gate (DG) MOSFET in the sub-threshold region by solving Poissonpsilas equation using the parabolic profile approach. The analytical model evaluates surface potential, threshold voltage, sub-threshold slope and sub-threshold drain current. Further, to improve the gate control and reduce the gate...
We propose a simple and accurate three- dimensional (3-D) analytical model for the threshold voltage of AlGaN/GaN modulation doped field effect transistor (MODFET) taking into account the short channel effects (SCEs) and the narrow width effects (NWEs) present simultaneously in a small geometry device. The model includes the effect of vital parameters such as doping and thickness of the barrier layer...
An accurate non linear charge-control model of the two dimensional electron gas (2-DEG) of an insulated gate AlGaN/GaN HFET is proposed which incorporates the dominant effect of polarization induced charge at the AlGaN/GaN interface. It is based on new polynomial dependence of sheet carrier density on position of quasi Fermi level to consider the quantum effects and to validate it from sub threshold...
The electrical behavior of deca-nanometer ISE MOSFET with gate stack: ISEGaS has been investigated and a computationally efficient analytical model using Evanescent Mode Analyses (EMA), for solving two-dimensional Poisson's equation in the channel region, has been presented for accurate prediction of surface potential, electric field, subthreshold current and threshold voltage. An important short...
In the present work, a two-dimensional analytical model for novel device architecture, asymmetric gate stack surrounding gate transistor (ASYMGAS SGT) is presented and its effectiveness in suppressing short channel effects and hot carrier effects is investigated. The model is developed by solving the Poisson equation in cylindrical coordinates assuming a parabolic potential profile in the radial direction...
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