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A two-dimensional analytical model is presented to study the impact of LACGAS device on the device characteristics. It is demonstrated that LACGAS leads to suppression of short channel effects such as threshold voltage (Vth) roll-off, drain induced barrier lowering (DIBL) and hot carrier effects. It also improves the transport efficiency owing to a greater gate control which is achieved by incorporating...
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature,...
In recent years, double gate high electron mobility transistor (DGHEMT) have been introduced to provide better immunity to short channel effects which are inescapable with downscaling of the single gate devices due to fundamental limit on gate-to-channel thickness. Furthermore, in sub 100 nm regime, for lower device aspect ratio, channel thickness also becomes an important parameter affecting the...
In this paper, we propose a novel MOSFET design: Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET and investigate the effect of the negative junction depth (NJD) for different source drain(S/D) extension on the electrical behaviour of proposed structure. The results are compared with conventional Trapezoidal Recessed Channel (TRC) MOSFET using device simulators-DEVEDIT 3-D and...
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for lightly doped Double Gate (DG) MOSFET in the sub-threshold region by solving Poissonpsilas equation using the parabolic profile approach. The analytical model evaluates surface potential, threshold voltage, sub-threshold slope and sub-threshold drain current. Further, to improve the gate control and reduce the gate...
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