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The objective of this paper is to investigate and explore the potential of AlGaN/GaN based metal insulator semiconductor heterostructure field effect transistor (MISHFET) device for high temperature applications. A temperature dependent analytical model is proposed taking into account the effect of various temperature dependent material properties. The electrical characteristics like drain current,...
An accurate non linear charge-control model of the two dimensional electron gas (2-DEG) of an insulated gate AlGaN/GaN HFET is proposed which incorporates the dominant effect of polarization induced charge at the AlGaN/GaN interface. It is based on new polynomial dependence of sheet carrier density on position of quasi Fermi level to consider the quantum effects and to validate it from sub threshold...
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