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We demonstrated a GaN-InGaN core-shell nanorod periodic array lasing under room temperature. Optical simulations and photoluminescence measurement revealed optically-coupled whisper gallery modes. The threshold pumping density was 80 kW/cm2 with a quality factor of 1940.
Room temperature highly circular polarized laser was demonstrated with a compact metal/GaN double-spiral nanowire cavity. The lasing action was observed with a UV wavelength of 363 nm and a high dissymmetry factor of +1.05.
A semi-empirical model is developed to model the multiple-layer structure of hybrid colloidal quantum dots in light emitting diodes. The layer-sequence effect of the quantum dots matches with the measured data and the optimal condition is obtained.
Using thermal strain concept, we can tune the bandgap of bilayer MoS2 through the two different thermal expansion coefficients of sapphire. Also, we propose a simple model to explain and precisely predict the bandgap-shifted behavior.
Nano-ring light emitting diodes with different wall width shows that the effective bandgap can be tuned by reducing the strain. This research successful to make the devices with four colors emission on the same wafer.
We have successfully demonstrated that the femtosecond laser annealing treatment can give rise to significant improvements in both crystalline structure and defects reduction for the nonvacuum ink-printing CIGS thin films without introducing melting effect.
Enhanced infrared photoresponse is observed in InN pillars/ITO rods photodetectors fabricated by LP-MOCVD and oblique-angle electron beam evaporation. The enhanced IR portion photocurrent as high as 19% can be measured via AM1.5G solar simulated spectra.
Chip-level direct 16-QAM OFDM encoding of a few-transverse-mode 850-nm Zn-diffused VCSEL is employed to transmit 80-Gbit/s data covering 20-GHz analog bandwidth over 100-m-long OM4 MMF with corresponding BER of 3.3×10−3.
We demonstrate that the photoluminescence emission intensity of the CVD-grown MoSe2 monolayers can be effectively enhanced more than 30 times after a simple hydrohalic acid treatment, providing the cost-effect manufacturing of atomically-thin two-dimensional semiconductor materials.
We demonstrate the advantages of femtosecond laser annealing on non-vacuum CIGS thin films. The PL spectra implied some defect-levels or band-fluctuations were eliminated, and the conversion efficiency and ideal factor were enhanced after laser annealing.
Through the laser-ablation and aerosol-jet printing techniques, a novel photoluminescent quantum-dots device with microscale patterns has been demonstrated as a white-light emitting source with stable emission at different driving currents and larger color productivity domain.
We experimentally realized a gigabit underwater wireless optical communication system using commercially available 450 nm blue laser diode. By implementing 16-QAM-OFDM modulation, we achieved data rate of 3.2 Gbit/s with a BER of 6.83×10−4 over 6.6 m channel.
A white LED is demonstrated by incorporating three kinds of colloidal quantum dots and sodium chloride. Further lifetest shows great stability up to 146 hours under 203.4 mW/cm2 of blue pump power.
The compact and energy-efficient planar metal-GaN spiral nanowire cavity lasing device has been demonstrated with high circularly polarized UV laser light at 364 nm and the circular dichroism performance enhanced to dissymmetry factor of +1.4.
An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.
In this work, we have successfully demonstrated that the color-conversion efficiency in colloidal quantum dots can be greatly enhanced by light-emitting diodes (LEDs) with novel structures of nanorods embedded in microholes. Via an integrated technology of the nano-imprint and photolithography, nanorods structures can be fabricated at specific locations, generating functional nanostructured LEDs for...
We report a site-controlled growth of InN on a GaN substrate. Crystalline InN micropillars were selectively grown from the hexagonal V-pits on GaN surface. The grown mechanism and photoluminescent property will be discussed.
Laser-based white light communication system with free-standing phosphor film is demonstrated, and the effect of phosphor concentration on white light quality and data quality is discussed to achieve the highest data rate of 6.8 Gbit/s.
6.4-m underwater optical wireless communication based on a GaN blue laser diode under direct 8.8-Gbps QAM-OFDM encoding is demonstrated with an average signal-to-noise ratio of 16 dB and a bit error rate of 3.8×10−3.
A transmission line aided impedance matching package for 450-nm GaN laser diode is employed to increase the directly encoded 16-QAM OFDM transmission up to 14-Gbps over 7 m in free-space after modulation throughput intensity optimization.
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