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GaN-based wide bandgap semiconductor materials have been widely applied in fabrication of optoelectronic devices such as LEDs and LDs. These photonic devices have many practical applications in solid state lighting, color display and high density optical data storage. In this article, we report the current status of GaN-based blue vertical cavity surface emitting lasers (VCSELs) and photonic crystal...
We demonstrated a novel air/semiconductor mirrors integrated distributed feedback lasers by focused ion beam technology. When two DFB lasers are powered together, an injection-locking operation can produce strong microwave signals up to 25.5 GHz.
We demonstrated CW current injection of GaN VCSELs with hybrid mirrors at room temperature. The laser characteristics, such as temperature dependent laser threshold current, spontaneous emission coupling factors, have been measured and discussed.
We successfully demonstrated and analyzed the angular-resolved characteristics of GaN-based photonic-crystal surface emitting lasers at different band edges (Γ, K, and M), showing specific lasing angles in measured dispersion diagram.
Recent progress on fabrication technology and demonstration of current injection GaN-based blue VCSELs are presented. Performance of current injection blue VCSELs with threshold current of 1.4 mA and emission wavelength of 462 nm are described.
Lasing characteristics of 12-fold quasi-periodic photonic crystal micro-cavity lasers are obtained and compared with triangular lattice photonic crystal lasers. An ultra-low threshold is observed and tolerance of fabrication imperfection in QPC lasers is investigated.
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