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Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.
The light enhancement of PhC LEDs within the collection cone angle was obtained according to measured far-field patterns. In a plusmn20deg collection cone, the collimated PhC LED was enhanced up to ~2.4.
Experimental investigation of A-type and B-type guided modes was performed in GaN-based film-transferred photonic crystal light-emitting diodes. Good agreement with the band structure calculated in the limit of two-dimensional free photon was obtained.
Lasing characteristics of 12-fold quasi-periodic photonic crystal micro-cavity lasers are obtained and compared with triangular lattice photonic crystal lasers. An ultra-low threshold is observed and tolerance of fabrication imperfection in QPC lasers is investigated.
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